preliminary preliminary maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 20 v average forward current i o 3.0 a power dissipation p d 1.45 w * operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 86.2 c/w * electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =10v 2.0 3.0 ma bv r i r =5.0ma 20 v v f i f =100ma 0.14 0.18 v v f i f =500ma 0.19 0.23 v v f i f =1.0a 0.24 0.28 v v f i f =2.0a 0.29 0.33 v v f i f =3.0a 0.35 0.40 v c t tbd pf CTLSH3-2M322HL surface mount ultra low v f silicon schottky rectifier tiny leadless module tm tlm322 case central semiconductor corp. tm r0 (6-january 2006) description: the central semiconductor CTLSH3-2M322HL is a high performance hilo? 3.0a schottky rectifier designed for applications where small size and operational efficiency are the prime requirements. with a maximum power dissipation of 1.45w, and a very small package footprint (smaller than the sot-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. * fr-4 epoxy pcb with copper mounting pad area of 21mm 2 . marking code: cbb features: ? hilo? device characteristics (high current/low v f ) ? ultra low forward voltage drop (v f =0.35v typ. @ 3.0a) ? high thermal efficiency ? small tlm 2x2mm case ? high current (i f =3.0a) applications: ? dc/dc converters ? voltage clamping ? protection circuits ? battery powered portable equipment
preliminary central semiconductor corp. tm tlm322 case - mechanical outline CTLSH3-2M322HL surface mount ultra low v f silicon schottky rectifier tiny leadless module tm r0 (6-january 2006) lead code: 1) cathode 2) anode 3) anode marking code: cbb suggested mounting pad layout for maximum power dissipation (dimensions in mm) for standard mounting refer to tlm322 package details
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